 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www..com OM6050SJ OM6052SJ OM6054SJ OM6051SJ OM6053SJ OM6055SJ HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) High Current, High Voltage 100V Thru 1000V, Up To 100 Amp N-Channel, Size 7 MOSFETs, High Energy Capability FEATURES * * * * * * Isolated Hermetic Metal Package Size 7 Die, High Energy Fast Switching, Low Drive Current Ease Of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS @ 25C PART NUMBER OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ SCHEMATIC 1 VDS 100 V 200 V 500 V 600 V 800 V 1000 V RDS(on) .014 .030 .160 .230 .500 .800 ID (Continuous) 100 A 55 A 30 A 25 A 18 A 10 A 3.1 MECHANICAL OUTLINE o.165 .155 .805 .795 .290 .260 .065 .055 .150 .950 .140 .930 .665 .645 123 3 .750 .500 .200 .065 o.055 2 .200 .400 .160 TO-267 4 11 R0 3.1 - 105 OM6050SJ - OM6055SJ ABSOLUTE MAXIMUM RATINGS (T Parameter Drain Source Voltage Drain Gate Voltage (RGS = 1.0 M ) Continuous Drain Current @ TC = 25C 2 Continuous Drain Current @ TC = 100C 2 Pulsed Drain Current1 Max. Power Dissipation @ TC = 25C Max. Power Dissipation @ TC = 100C Linear Derating Factor Junction-to-Case Linear Derating Factor Junction-to-Ambient Operating and Storage Temp. Range TJ, Tstg Symbol VDS VDGR ID ID IDM PD PD C = 25 C unless otherwise noted) Unit V V A A A W W W/C W/C C C OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ 100 100 100 43 235 200 200 55 23 135 500 500 30 13 80 280 110 2.22 .025 -55 to +150 275 2. Package Pin Limitation: 35 Amps. 600 600 25 10 75 800 800 18 7 50 1000 1000 10 4 30 Lead Temperature (1/16" from case for 10 sec.) Notes: 1. Pulse Test: Pulse Width 300 msec, Duty Cycle 2%. THERMAL RESISTANCE (MAXIMUM) Junction-to-Case Junction-to-Ambient (Free Air Operation) @ TA = 25 C .45 40 C/W C/W RthJC RthJA PRELIMINARY ELECTRICAL CHARACTERISTICS Characteristic Gate Threshold Voltage Gate Source Leakage Current Off State Drain-Source Leakage Test Condition VDS = VGS, ID = 250A VGS = 20 VDC VDS = VDSS x 0.8 VGS = 0V TC = 25C TC = 125C Symbol VGS(th) IGSS IDSS IDSS (TC = 25C unless otherwise noted) Min. 2.0 Max. 4.0 100 10 .10 100 200 500 600 800 1000 .014 .030 .160 .230 .500 .800 V Units V nA A mA Part No. All All All All OM6050SJ OM6051SJ 3.1 Drain-Source Breakdown Voltage VGS = 0V, ID = 250 A VDSS OM6052SJ OM6053SJ OM6054SJ OM6055SJ OM6050SJ OM6051SJ Drain-Source Breakdown Voltage VGS = 10V, ID = ID25 x 0.5 RDS(on) OM6052SJ OM6053SJ OM6054SJ OM6055SJ The above data is preliminary. Please contact factory for additional data and the dynamic and switching characteristics. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 |
Price & Availability of OM6050SJ
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |